View SSM6K30FE_4134782.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SSM6K30FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOS)
SSM6K30FE
High speed switching DC-DC Converter
* * * Small package Low RDS (ON) High speed switching : Ron = 210 m (max) (@VGS = 10 V) : Ron = 420 m (max) (@VGS = 4 V) : ton = 19 ns (typ) : toff = 10 ns (typ) Unit: mm
Absolute Maximum Ratings (Ta = 25C) MOSFET
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 20 1.2 2.4 500 150 -55~150 Unit V V A
1,2,5,6 : Drain 3 : Gate 4 : Source
JEDEC
mW C C
2-2N1A
JEITA TOSHIBA
Note:
Weight: 3 mg (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm2)
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
KA
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
SSM6K30FE
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 16 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 0.6 A ID = 0.6 A, VGS = 10 V ID = 0.6 A, VGS = 4 V (Note 2) (Note 2) (Note 2) Min 20 1.1 0.68 Typ. 145 260 60 17 47 19 10 Max 1 1 2.3 210 420 Unit A V A V S m pF pF pF ns
VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.6 A, VGS = 0~4 V, RG = 10
Note 2:Pulse measurement
Switching Time Test Circuit
(a) Test circuit
out
(b) VIN
4V 10% 90%
4V 0 10 s
in
RG
0V
VDD
(c) VOUT
VDD
10% 90% tr ton tf toff
VDD = 10 V RG = 10 < Duty = 1% VIN: tr, tf < 5 ns Common source Ta = 25C
VDS (ON)
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 0.1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device.
2
2007-11-01
SSM6K30FE
ID - V D S
3
10
ID - V G S
Common Source Ta=25
Common Source VDS =3V
1
2.5
10V
6V
4V
3.7V
(A)
(A)
D
2
0.1
Drain currrent I
25
1.5
3.3V
Drain current I
D
0.01
Ta=100
-25
1
3.0V 2.5V
0.5
0.001
0 0 0.5 1 Drain-Source voltage V DS (V) 1.5
VGS =2.1V
2
0.0001 0 1 2 Gate-Source voltage V GS (V) 3 4
R D S(O N) - I D
0.5
0.5
R D S(O N) - V G S
Common Source Ta=25
Common Source ID=0.6A
0.4 Drain-Source on-resistance RDS(ON) ()
0.4 Drain-Source on-resistance RDS(ON) ()
0.3
0.3
VGS =4V
0.2
Ta=100 25
0.2
10V
0.1
0.1
-25
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
0 0 2 4 6 8 10 12
Drain current I D (A)
Gate-Source Voltage V GS (V)
R D S(O N) - T a
0.5
2
V th - T a
Common Source I D=0.6A
0.4 Drain-Source on-resistance RDS(ON) ()
1.8 1.6 1.4
Common Source ID=0.1mA VDS =5V
0.3
VGS =2.5V
Gate threshold voltage Vth(V)
1.2 1 0.8 0.6 0.4 0.2
0.2
4V
0.1
0 -25 0 25 50 75 100 125 150
0 -25 0 25 50 75 100 125 150
Ambient temperture Ta ()
Ambient temperture Ta ()
3
2007-11-01
SSM6K30FE
|Y fs| - I D
10000
ID R - V D S
3
Common Source V DS =5V Ta=25
Forward transfer admittance |Yfs| (mS) 1000
2.5 (mA)
Common Source VGS =0 Ta=25
Drain reverse current I
DR
2
100
1.5
1
10
0.5
1 0.001
0
0.01 0.1 Drain current I D (A) 1 10
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Drain-Source voltage V DS (V)
C - V DS
1000
t - ID
Common Source VGS =0V f=1MHz Ta=25
1000
Common Source VDD=10V
100
toff tf
VGS =0 4V Ta=25
Capacitance C (pF)
100
Ciss
Switching time t (ns)
ton
10
Coss
10
tr
Crss
1
1 0.1 1 10 100 Drain-Source voltage V DS (V)
0.1 0.01
0.1 Drain curren I D (A)
1
10
Dyn amic In p u t Ch ara cteristic
12
10
GS(V)
Common Source VDD=16V I D=1.2A Ta=25
8
Gate-Source voltage V
6
4
2
0 0 0.5 1 1.5 2 2.5 3 3.5
Tatal gate charge Qg (nC)
4
2007-11-01
SSM6K30FE
S a fe o p eratin g area
10
IDmax (Pulse) * 1ms
1 (A)
IDmax (continuous) DC operation Ta=25
10ms
100ms
Drain current I
D
0.1
Mounted on FR4 board (25.4mmx25.4mmx1.6t) Cu pad645mm2
0.01
* Single Pulse Ta=25 Curves must be derated linearly with increase in temperture.
0.001 0.1 1 10 100 Drain-Source voltage V DS (V)
PD - Ta
600
Mounted on FR4 board (25.4mmx25.4mmx1.6t) Cu pad645mm2
500
D(mW)
400
Drain power dissipationP
300
200
100
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta ()
5
2007-11-01
SSM6K30FE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01

▲Up To Search▲

Price & Availability of SSM6K30FE

	To Download SSM6K30FE Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .